, o n&. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MTP3055E n-channel 60v-0.1q-12a to-220 stripfet? mosfet type MTP3055E vdss 60 v rds(on) < 0.15 a id 12 a typical rds(on) = 0.1 q avalanche rugged technology 100% avalanche tested 175c operating temperature application oriented characterization applications high current, high speed switching solenoid and relay drivers regulators dc-dc & dc-ac converters motor control, audio amplifiers automotive environment (injection, abs, air-bag, lampdrivers, etc.) to-220 internal schematic diagram absolute maximum ratings symbol vds vdgr vgs id idm idm(-) plot tstg tj parameter drain-source voltage (vgs = 0) drain- gate voltage (res = 20 kii) gate-source voltage drain current (continuous) at tc = 25 c drain current (pulsed) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c storage temperature max. operating junction temperature value 60 60 20 12 9 48 40 -65 to 175 175 unit v v v a a a w c c {?) pulse width limited by safe operating area first digit of the datecode being z or k identifies silicon characterized in this datasheet. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verity that datasheets are current before placing orders.
MTP3055E thermal data rthj-case rlhj-amb r|hc-s i, thermal thermal thermal maximum resistance resistance resistance junction-case junction-ambient case-sink lead temperature for soldering max max typ purpose 3.75 62.5 0.5 300 c/w oc/w c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 25 v) max value 12 50 unit a mj electrical characteristics (tcase = 25 c unless otherwise specified) off symbol v(br)dss loss 'gss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions !d=250|ua vgs=0 vds = max rating vds = max rating x 0.8 tc = 125 c vqs = + 20 v min. 60 typ. max. 1 10 100 unit v ma ua na on (*) symbol vcs(th) ros(on) ld(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 250 u.a vgs = 10v id= 7 a vds > ld(on) x rds(on)ma!< vgs = 10 v min. 2 12 typ. 2.9 0.1 max. 4 0.15 unit v il a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > ld(on) x rds(on)max id = 6 a vds = 25 v f = 1 mhz vgs = 0 min. 4 typ. 6 760 100 30 max. unit s pf pf pf
MTP3055E electrical characteristics (continued) switching resistive load symbol td(on) tr td(off) tf q9 qgs qgd parameter turn-on time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge test conditions vod = 30 v id= 7 a rg= 50 j vgs= 10 v (see test circuit) id= 12 a vgs = 10 v vdd = 40 v (see test circuit) min. typ. 20 65 70 35 15 7 5 max. unit ns ns ns ns nc nc nc source drain diode symbol isd isdm(') vsd (?) trr qrr parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge test conditions isd = 12 a vgs =0 isd = 12 a di/dt = 100 a/us vdd = 30 v tj = 150 c min. typ. 65 0.17 max. 12 48 2.0 lunit a a v ns uc ) pulsed: pulse duration = 300 us, duty cycle 1.5 % (?) pulse width limited by safe operating area
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